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GaAs FET
CLY 15
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Datasheet
* Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8 GHz typ. 31.5 dBm * Efficiency better 50%
S D S G
ESD:
Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped)
Package 1)
CLY 15
CLY 15
Q62702-L99
SOT 223
Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature Total power dissipation (Ts < 80C)
Ts: Temperature at soldering point
Symbol VDS VDG VGS ID TCh Tstg Ptot 9 12 -6 5 150 -55...+150 4.7
Unit V V V A C C W
Thermal resistance Channel-soldering point (GND)
RthChS
< 15
K/W
1) Dimensions see chapter Package Outlines
Siemens Aktiengesellschaft
pg. 1/7
09/96 HL EH PD 21
GaAs FET
Electrical characteristics (TA = 25C , unless otherwise specified) Characteristics Drain-source saturation current *)
VDS = 3V VGS = 0V
CLY 15
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Symbol
min 2.4 -3.8
typ 3.2 20 -2.8
max 4.8 400 70 -1.8
Unit A A A V dB
IDSS ID
Cut-off current
VDS = 3V VGS = -3.8V
Gate cut-off current
VDS = 3V VGS = -3.8V
IG VGS(p) G
f = 1.8GHz
Pinch-off Voltage
VDS=3V ID=400A
Small Signal Gain *)
VDS = 3V
Pin = 5dBm
ID = 1.4A
-
6 32.5
dBm
Output Power *)
VDS = 3V
Pin = 29dBm
Po
f = 1.8GHz
32
ID = 1.4A
Output Power *)
VDS = 5V
Pin = 30 dBm
Po
f = 1.8GHz
34.5
35
-
dBm
ID = 1.4A
1dB-Compression Point *)
VDS = 3V ID = 1.4A
f = 1.8GHz
P1dB P1dB
D
45
31.5 34.5 50
-
dBm dBm %
1dB-Compression Point *)
VDS = 5V ID = 1.4A
f = 1.8GHz
Power Added Efficiency *)
VDS = 3V Pin = 29dBm ID = 1.4A f = 1.8GHz
*) pulsed measurement; duty cycle 1:10; ton = 1ms, power matching conditions.
Siemens Aktiengesellschaft
pg. 2/7
09/96 HL EH PD 21
GaAs FET
CLY 15
________________________________________________________________________________________________________
Output Charateristics
3 2,5 VGS = -0.5V 2 VGS = 0V
ID [A]
1,5 1
VGS = -1V VGS = -1.5V
0,5 VGS = -2V 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5
VDS [V]
Power Characteristics
35 30 25 20 15 10 5 0 -5 0 5 10 15 20 25 30 Pin [dBm] 70 60 50 40 30 20 Pout 10 PAE 0 @ 3V/1.4A
Power Characteristics
40 35 30 80 70 60 @ 5V/1.4A
Pout [dBm]
20 15 10 5 0 -5 0 5 10 15 20 25 30 35
40 30 20 10 0
PAE [%]
25
50
Pout PAE
Pin [dBm]
Siemens Aktiengesellschaft
pg. 3/7
09/96 HL EH PD 21
GaAs FET
typ. Common Source S-Parameter VDS = 3V ID=1.4A Zo=50
f GHz 0.200 0.250 0.300 0.350 0.400 0.450 0.500 0.550 0.600 0.650 0.700 0.750 0.800 0.850 0.900 0.950 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.200 3.400 3.600 3.800 4.000 4.200 4.400 4.600 4.800 5.000 5.200 5.400 5.600 5.800 6.000 S11 MAG ANG 0.91 0.91 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.91 0.91 0.92 0.92 0.93 0.93 0.93 0.94 0.94 0.94 0.93 0.92 0.91 0.90 0.89 0.86 0.83 0.89 0.83 0.85 0.88 0.89 0.90 0.91 0.92 -150.9 -160.6 -167.9 -173.7 -178.7 176.9 173.0 169.5 166.1 163.1 160.0 157.2 154.6 152.0 149.3 146.9 144.5 135.2 126.7 118.5 110.6 103.2 96.3 89.3 82.8 77.0 71.3 66.0 61.6 57.3 53.1 49.2 46.4 44.7 44.2 43.7 42.2 39.4 36.5 33.1 29.6 26.4 S21 MAG ANG 5.69 4.63 3.89 3.34 2.92 2.60 2.34 2.12 1.95 1.79 1.66 1.54 1.45 1.36 1.28 1.21 1.15 0.95 0.81 0.70 0.61 0.55 0.49 0.44 0.40 0.37 0.34 0.32 0.31 0.30 0.31 0.32 0.34 0.36 0.07 0.34 0.30 0.27 0.24 0.22 0.19 0.18 99.7 93.5 88.7 84.6 80.9 77.5 74.6 71.4 68.7 66.1 63.5 60.9 58.6 56.1 53.8 51.5 49.0 40.3 31.8 23.8 16.3 8.7 2.1 -4.1 -10.0 -14.9 -19.6 -23.4 -26.8 -29.7 -33.1 -38.1 -44.9 -55.4 -36.2 -80.6 -92.1 -100.8 -107.8 -113.6 -118.9 -124.4 S12 MAG ANG 0.01 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.05 0.05 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 48.5 45.9 46.8 47.4 47.5 47.6 48.1 47.7 47.0 47.1 46.6 45.6 45.0 43.9 43.0 41.9 41.0 36.1 31.9 26.1 20.8 15.6 10.4 5.2 0.2 -4.2 -9.7 -15.0 -19.4 -23.7 -28.1 -31.9 -35.4 -37.5 -38.1 -39.4 -40.3 -42.5 -45.0 -48.6 -51.4 -54.4
CLY 15
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S22 MAG ANG 0.90 0.87 0.88 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.88 0.88 0.88 0.89 0.88 0.90 0.90 0.90 0.91 0.92 0.93 0.92 0.93 0.93 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 176.0 173.8 171.8 170.8 168.8 167.3 165.8 164.2 162.8 161.2 159.7 158.3 156.9 155.6 154.0 152.6 151.3 145.8 140.1 134.7 129.7 124.3 119.1 114.4 109.3 104.5 99.8 95.1 90.8 87.0 83.1 79.8 76.4 73.4 71.0 68.2 65.2 62.2 58.7 55.7 52.1 48.0
Siemens Aktiengesellschaft
pg. 4/7
09/96 HL EH PD 21
GaAs FET
typ. Common Source S-Parameter VDS = 5V ID=1.4A Zo=50
f GHz 0.200 0.250 0.300 0.350 0.400 0.450 0.500 0.550 0.600 0.650 0.700 0.750 0.800 0.850 0.900 0.950 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.200 3.400 3.600 3.800 4.000 4.200 4.400 4.600 4.800 5.000 5.200 5.400 5.600 5.800 6.000 S11 MAG ANG 0.90 0.89 0.89 0.89 0.88 0.89 0.88 0.88 0.89 0.88 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.90 0.91 0.92 0.92 0.93 0.93 0.93 0.93 0.93 0.92 0.92 0.91 0.90 0.88 0.87 0.86 0.85 0.85 0.86 0.87 0.88 0.89 0.90 0.90 -151.1 -160.6 -167.8 -173.7 -178.7 177.0 173.2 169.6 166.4 163.1 160.3 157.5 154.9 152.1 149.7 147.1 144.7 135.5 127.1 119.1 111.1 103.7 96.6 89.8 83.2 77.3 71.8 66.6 61.8 57.9 54.1 50.5 47.8 45.7 43.4 42.3 40.3 37.7 35.2 32.1 29.0 26.0 S21 MAG ANG 7.61 6.18 5.19 4.45 3.90 3.47 3.11 2.82 2.59 2.38 2.20 2.05 1.91 1.79 1.69 1.59 1.51 1.24 1.04 0.90 0.78 0.68 0.61 0.54 0.48 0.43 0.39 0.37 0.34 0.32 0.32 0.31 0.32 0.32 0.32 0.31 0.30 0.28 0.26 0.24 0.22 0.21 98.8 92.4 87.5 83.3 79.4 75.9 72.8 69.5 66.6 63.9 61.1 58.4 55.9 53.2 50.7 48.4 45.7 36.2 27.1 18.3 10.1 2.1 -5.1 -12.0 -18.6 -24.0 -29.3 -33.5 -37.2 -40.5 -43.9 -48.3 -53.8 -60.9 -68.9 -77.5 -86.7 -94.5 -101.8 -108.4 -114.5 -121.1 S12 MAG ANG 0.01 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.05 0.05 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.08 0.08 0.08 46.5 43.4 46.5 46.0 46.5 47.3 47.9 47.8 47.4 47.4 46.5 45.6 45.3 44.8 43.9 42.7 42.0 37.8 32.2 27.4 22.5 18.2 12.5 7.3 2.6 -2.6 -7.2 -12.1 -16.8 -21.1 -24.9 -27.6 -31.5 -33.4 -35.4 -37.2 -39.3 -41.6 -44.0 -48.5 -50.3 -54.0
CLY 15
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S22 MAG ANG 0.84 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.83 0.83 0.84 0.84 0.85 0.86 0.86 0.87 0.88 0.89 0.90 0.91 0.91 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.93 176.7 174.7 172.9 171.8 169.7 168.3 166.7 165.5 163.9 162.6 161.0 159.6 158.0 156.8 155.4 154.1 152.8 147.3 141.9 136.8 131.6 126.3 121.3 116.1 111.4 106.3 101.8 97.2 92.5 88.8 85.1 81.4 78.1 74.9 72.2 69.3 66.2 63.1 59.6 56.6 53.0 49.0
Siemens Aktiengesellschaft
pg. 5/7
09/96 HL EH PD 21
GaAs FET
CLY 15
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 6/7
09/96 HL EH PD 21
GaAs FET
CLY 15
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 7/7
09/96 HL EH PD 21

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